Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25V Continuous Drain Current 8.0...
IRHF7130: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light Weigh...
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Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Neutron Tolerant· Identical Pre...
Parameter | Units | ||
ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 8.0 | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 5.0 | |
IDM | Pulsed Drain Current | 32 | |
PD @ TC = 25 | Max. Power Dissipation | 25 | W |
Linear Derating Factor | 0.20 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 130 | mJ |
IAR | Avalanche Current | 8.0 | A |
EAR | Repetitive Avalanche Energy | 2.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.5 | V/ns |
TJ TSTG |
Operating JunctionStorage Temperature Range | -55 to 150 | |
Lead Temperature | 300 (0.063 in. (1.6mm) from case for 10 sec.) | ||
Weight | 0.98 (Typical) | g |
International Rectifier's RADHard HEXFET® technology IRHF7130 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRHF7130 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHF7130 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.