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IRHF597110

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· Ease of Paralleling· Hermetically SealedSpecifications Parameter U...

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SeekIC No. : 004377969 Detail

IRHF597110: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Dr...

IRHF597110 Data Sheet

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Part Number:
IRHF597110
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed


Specifications

 
Parameter
Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current

-2.6
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
-1.6
IDM
 Pulsed Drain Current
-10.4
PD @ TC = 25°C
 Max. Power Dissipation
15
W
 Linear Derating Factor
0.12
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
30
mJ
IAR
 Avalanche Current
-2.6
A
EAR
 Repetitive Avalanche Energy
1.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
6.6
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300 (0.063 in./1.6mm from case for 10s)
  Weight
0.98 (Typical)
g



Description

International Rectifier's R5TM technology IRHF597110 provides high performance power MOSFETs for space applications. These devices IRHF597110 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHF597110 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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