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IRHF57Z30

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Neutron Tolerant· Identical Pre and Post Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Electrically IsolatedSpecifications ...

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SeekIC No. : 004377967 Detail

IRHF57Z30: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Neutron Tolerant· Identical Pre and Post Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Dri...

IRHF57Z30 Data Sheet

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Part Number:
IRHF57Z30
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Neutron Tolerant
· Identical Pre and Post Electrical Test Conditions
· Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Electrically Isolated


Specifications

 
Parameter
Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current
12*
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
10
IDM
 Pulsed Drain Current
48
PD @ TC = 25°C
 Max. Power Dissipation
25
W
 Linear Derating Factor
0.2
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
520
mJ
IAR
 Avalanche Current
12
A
EAR
 Repetitive Avalanche Energy
2.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
3.0
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to +150
Storage Temperature Range
300 (0.063 in.(1.6 mm from case for 10s))
 Weight
0.98 ( Typical)
g

* For footnotes refer to the last page


Description

International Rectifier's R5TM technology IRHF57Z30 provides high performance power MOSFETs for space applications. These devices IRHF57Z30  have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHF57Z30  retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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