Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· Ease of Paralleling· Hermetically SealedSpecifications Parameter Units ID @ V...
IRHF57234SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· ...
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Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Neutron Tolerant· Identical Pre...
Parameter |
Units | ||
ID @ VGS = 12V, TC = 25 |
Continuous Drain Current |
5.2 |
A |
ID @ VGS = 12V, TC = 100 |
Continuous Drain Current |
3.3 | |
IDM |
Pulsed Drain Current |
20.8 | |
PD @ TC = 25 |
Max. Power Dissipation |
25 |
W |
Linear Derating Factor |
0.2 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
142 |
mJ |
IAR |
Avalanche Current |
5.2 |
A |
EAR |
Repetitive Avalanche Energy |
2.5 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
6.8 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Lead Temperature |
300 ( 0.063 in./1.6mm from case for 10s) |
||
Weight |
0.98(Typical) |
9 |
International Rectifier's R5TM technology IRHF57234SE provides high performance power MOSFETs for space applications. These devices IRHF57234SE have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHF57234SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.