IRHF57234SE

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· Ease of Paralleling· Hermetically SealedSpecifications Parameter Units ID @ V...

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IRHF57234SE Picture
SeekIC No. : 004377966 Detail

IRHF57234SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· ...

floor Price/Ceiling Price

Part Number:
IRHF57234SE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed



Specifications

Parameter
Units
ID @ VGS = 12V, TC = 25
Continuous Drain Current
5.2
A
ID @ VGS = 12V, TC = 100
Continuous Drain Current
3.3
IDM
Pulsed Drain Current
20.8
PD @ TC = 25
Max. Power Dissipation
25
W
Linear Derating Factor
0.2
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
142
mJ
IAR
Avalanche Current
5.2
A
EAR
Repetitive Avalanche Energy
2.5
mJ
dv/dt
Peak Diode Recovery dv/dt
6.8
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300 ( 0.063 in./1.6mm from case for 10s)
Weight
0.98(Typical)
9




Description

International Rectifier's R5TM technology IRHF57234SE provides high performance power MOSFETs for space applications. These devices IRHF57234SE have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHF57234SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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