IRGPS40B120UDP

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Packaging : Tube
Configuration : Single
Continuous Collector Current at 25 C : 80 A
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1.2 KV
Package / Case : TO-274AA
Power Dissipation : 595 W
Collector-Emitter Saturation Voltage : 3.5 V


Features:

• Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	1200	V
IC @ TC = 25	Continuous Collector Current	80	A
IC @ TC = 100	Continuous Collector Current	40
ICM	Pulsed Collector Current	160
ILM	Clamped Inductive Load Current	160
IF @ TC = 25	Diode Continuous Forward Current	80
IF @ TC = 100	Diode Continuous Forward Current	40
IFM	Diode Maximum Forward Current	160
VGE	Gate-to-Emitter Voltage	± 20	V
PD @ TC = 25	Maximum Power Dissipation	595	W
PD @ TC = 100	Maximum Power Dissipation	238
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)

Parameters:

Technical/Catalog Information	IRGPS40B120UDP
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	80A
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 50A
Power - Max	595W
Mounting Type	Through Hole
Package / Case	Super-247-3 (Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGPS40B120UDP IRGPS40B120UDP