Features: • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit capability• Square RBSOA• Positive VCE(on) Temperature Coefficient• Extended lead TO-247 packageSpecifications Parameter Max. Units VCES Collector-to-Emitter Breakdown V...
IRGP20B120U-E: Features: • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit capability• Square RBSOA• Positive VCE(on) Temperature Coefficient• Extended lead TO...
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IGBT Transistors 1200V UltraFast 5-40kHz Single IGBT
Parameter |
Max. | Units | |
VCES | Collector-to-Emitter Breakdown Voltage | 1200 | V |
I @ T= 25°C | Continuous Collector Current (Fig.1) | 40 | |
I @ T= 100°C | Continuous Collector Current (Fig.1) | 20 | |
ICM | Pulsed Collector Current (Fig.3, Fig. CT.5) | 120 | |
ILM | Clamped Inductive Load Current(Fig.4, Fig. CT.2) | 120 | |
VGE | Gate-to-Emitter Voltage | ± 20 | V |
EAS@ TC=25°C |
CAvalanche Energy, single pulse IC= 25A, VCC= 50V, RGE= 25ohm |
65 | mJ |
DC @ T= 25°C | CMaximum Power Dissipation (Fig.2) | 300 | W |
PD @ TC= 100°C | CMaximum Power Dissipation (Fig.2) | 120 | |
TJT STG |
Operating Junction and Storage Temperature Range | -55 to + 150 | °C |
Soldering Temperature, for 10 seconds | 300, (0.063 in. (1.6mm) from case) | ||
Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
• Benchmark efficiency above 20KHz
• Optimized for Welding, UPS, and Induction Heating applications
• Rugged with UltraFast performance
• Low EMI
• Significantly Less Snubber required
• Excellent Current sharing in Parallel operation
• Longer leads for easier mounting
IRGP20B120U-E