IGBT Transistors
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Features: • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit ca...
US $2.35 - 4.22 / Piece
IGBT Transistors 1200V UltraFast 5-40kHz Single IGBT
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1.2 KV |
Collector-Emitter Saturation Voltage : | 3.05 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Continuous Collector Current at 25 C : | 40 A | Power Dissipation : | 300 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247 |
Packaging : | Tube |
Technical/Catalog Information | IRGP20B120UD-EP |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 40A |
Vce(on) (Max) @ Vge, Ic | 4.85V @ 15V, 40A |
Power - Max | 300W |
Mounting Type | Through Hole |
Package / Case | TO-247-3 (TO-247AD, Straight Leads) |
Packaging | Bag |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRGP20B120UD EP IRGP20B120UDEP |