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IRGPS40B120UD

Features: • Non Punch Through IGBT Technology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.• Super-247 Package.Specifications Parameter M...

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SeekIC No. : 004377916 Detail

IRGPS40B120UD: Features: • Non Punch Through IGBT Technology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Po...

IRGPS40B120UD Data Sheet

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Part Number:
IRGPS40B120UD
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.


Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 80 A
IC @ TC = 100°C Continuous Collector Current 40 A
ICM Pulsed Collector Current 160 A
ILM Clamped Inductive Load Current 160 A
IF @ TC = 25°C Diode Continuous Forward Current 80 A
IF @ TC = 100°C Diode Continuous Forward Current 40 A
IFM Gate-to-Emitter Voltage 160 V
VGE Reverse Voltage Avalanche Energy ±20 mJ
PD @ TC = 25°C Maximum Power Dissipation 595 W
PD @ TC = 100°C Maximum Power Dissipation 238 W
TJ TSTG Operating Junction and
Storage Temperature Range		 -55 to +150 °C
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) °C



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