Features: • Switching-loss rating includes all tail losses• HEXFREDTM soft ultrafast diodes• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 ...
IRGPH50FD2: Features: • Switching-loss rating includes all tail losses• HEXFREDTM soft ultrafast diodes• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Freq...
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Features: • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit ca...
Parameter | Max. | Units | |
VCES | Collector-to-Emitter Voltage | 1200 | V |
IC @ TC = 25°C | Continuous Collector Current | 45 | A |
IC @ TC = 100°C | Continuous Collector Current | 25 | A |
ICM | Pulsed Collector Current | 90 | A |
ILM | Clamped Inductive Load Current | 90 | A |
IF @ TC = 100°C | Diode Continuous Forward Current | 16 | A |
IFM | Diode Maximum Forward Current | 90 | A |
VGE | Gate-to-Emitter Voltage | ± 20 | V |
PD @ TC = 25°C | Maximum Power Dissipation | 200 | W |
PD @ TC = 100°C | Maximum Power Dissipation | 78 | W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
Operating Junction and Storage Temperature Range |
300 (0.063 in. (1.6mm) from case) | °C | |
Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |