IRGPH50F

Features:

• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	1200	V
IC @ TC = 25°C	Continuous Collector Current	45	A
IC @ TC = 100°C	Continuous Collector Current	25	A
ICM	Pulsed Collector Current	90	A
ILM	Clamped Inductive Load Current	90	A
VGE	Gate-to-Emitter Voltage	± 20	V
EARV	Reverse Voltage Avalanche Energy	20	mJ
PD @ TC = 25°C	Maximum Power Dissipation	200	W
PD @ TC = 100°C	Maximum Power Dissipation	78	W
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +150	°C
	Operating Junction and Storage Temperature Range	300 (0.063 in. (1.6mm) from case)	°C
	Mounting Torque, 6-32 or M3 Screw.	10 lbf•in (1.1 N•m)

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGPH50F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGPH50F provides substantial benefits to a host of high-voltage, highcurrent applications.