Features: • Short circuit rated - 10s @ 125°C, V GE = 15V• Switching-loss rating includes all tail losses• Optimized for medium operating frequency (1 to 10kHz)Specifications Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C...
IRGPC40M: Features: • Short circuit rated - 10s @ 125°C, V GE = 15V• Switching-loss rating includes all tail losses• Optimized for medium operating frequency (1 to 10kHz)Specifications ...
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Features: • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit ca...
Parameter |
Max. |
Units | |
VCES | Collector-to-Emitter Voltage |
600 |
V |
IC @ TC = 25°C | Continuous Collector Current |
40 |
A |
IC @ TC = 100°C | Continuous Collector Current |
24 | |
ICM | Pulsed Collector Current |
80 | |
ILM | Clamped Inductive Load Current |
80 | |
tsc | Short Circuit Withstand Time |
10 |
s |
VGE | Gate-to-Emitter Voltage |
±20 |
V |
EARV | Reverse Voltage Avalanche Energy |
15 |
mJ |
PD @ TC = 25°C | Maximum Power Dissipation |
160 |
W |
PD @ TC = 100°C | Maximum Power Dissipation |
65 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGPC40M have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGPC40M provides substantial benefits to a host of high-voltage, highcurrent applications.
These new short circuit rated devices IRGPC40M are especially suited for motor control and other applications requiring short circuit withstand capability.