Features: • Switching-loss rating includes all tail losses• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuo...
IRGPC20F: Features: • Switching-loss rating includes all tail losses• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Para...
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Features: • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit ca...
Parameter |
Max. |
Units | |
VCES | Collector-to-Emitter Voltage |
600 |
V |
IC @ TC = 25°C | Continuous Collector Current |
16 |
A |
IC @ TC = 100°C | Continuous Collector Current |
9.0 | |
ICM | Pulsed Collector Current |
64 | |
ILM | Clamped Inductive Load Current |
64 | |
VGE | Gate-to-Emitter Voltage |
±20 |
V |
EARV | Reverse Voltage Avalanche Energy |
5.0 |
mJ |
PD @ TC = 25°C | Maximum Power Dissipation |
60 |
W |
PD @ TC = 100°C | Maximum Power Dissipation |
24 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGPC20F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGPC20F provides substantial benefits to a host of high-voltage, highcurrent applications.