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IRGP450U

Features: • Switching-loss rating includes all tail losses• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 500 V IC @ TC = 25°C Continuous ...

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IRGP450U: Features: • Switching-loss rating includes all tail losses• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Paramet...

IRGP450U Data Sheet

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Part Number:
IRGP450U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
500
V
IC @ TC = 25°C Continuous Collector Current
59
A
IC @ TC = 100°C Continuous Collector Current
33
ICM Pulsed Collector Current
120
ILM Clamped Inductive Load Current
120
VGE Gate-to-Emitter Voltage
±20
V
EARV Reverse Voltage Avalanche Energy
20
mJ
PD @ TC = 25°C Maximum Power Dissipation
200
W
PD @ TC = 100°C Maximum Power Dissipation
78
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw.
10 lbf`in (1.1N`m)



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGP450UD2 have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGP450UD2 provides substantial benefits to a host of high-voltage, highcurrent applications.




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