Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recoverycircuits in PDP applications·Low VCE(on) and Energy per Pulse (EPULSE TM) for improved panel efficiency ·High repetitive peak current capability ·Lead Free packageSpecifications Parameter Max. Units ...
IRGP4065PbF: Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recoverycircuits in PDP applications·Low VCE(on) and Energy per Pulse (EPULSE TM) for improved panel efficiency ·High rep...
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Features: • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit ca...
Parameter |
Max. |
Units | |
VGE | Gate-to-Emitter Voltage |
±30 |
V |
IC@TC = 25 |
Continuous Collector Current,VGE@15V |
70 |
A |
IC@TC = 100 |
Continuous Collector,VGE@15V |
40 | |
IR@TC = 25 |
Repetitive Peak Current |
205 | |
PD@TC = 25 |
Power Dissipation |
178 |
W |
PD@TC = 100 |
Power Dissipation |
71 | |
Linear Derating Factor |
1.4 |
W/ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 150 |
|
Soldering Temperature for 10 seconds |
300 | ||
Mounting Torque, 6-32 or M3 Screw |
10lb. in (1.1N m) |
N |
This IGBT IRGP4065PbF is specifically designed for applications in Plasma Display Panels. The IRGP4065PbF utilizes advanced trench IGBT gy to achieve low V CE(on) and low EPULSE TM rating per silicon area which improve panel efficiency. Additional features re 150 operating junction temperature and high repetitive peak curren capability. The IRGP4065PbF features combine to make this T a highly efficient, robust and reliable device for PDP pplications.