IRGP4065PbF

Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recoverycircuits in PDP applications·Low VCE(on) and Energy per Pulse (EPULSE TM) for improved panel efficiency ·High repetitive peak current capability ·Lead Free packageSpecifications Parameter Max. Units ...

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IRGP4065PbF Picture
SeekIC No. : 004377858 Detail

IRGP4065PbF: Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recoverycircuits in PDP applications·Low VCE(on) and Energy per Pulse (EPULSE TM) for improved panel efficiency ·High rep...

floor Price/Ceiling Price

Part Number:
IRGP4065PbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Advanced Trench IGBT Technology
·Optimized for Sustain and Energy Recovery
   circuits in PDP applications
·Low VCE(on)   and Energy per Pulse (EPULSE TM)
   for improved panel efficiency
·High repetitive peak current capability
·Lead Free package



Specifications

  Parameter
Max.
Units
VGE Gate-to-Emitter Voltage
±30
V
IC@TC = 25
Continuous Collector Current,VGE@15V
70
A
IC@TC = 100

Continuous Collector,VGE@15V
40
IR@TC = 25


Repetitive Peak Current
205
PD@TC = 25

Power Dissipation
178
W
PD@TC = 100

Power Dissipation
71
  Linear Derating Factor
1.4
W/
TJ
TSTG
Operating Junction and
Storage Temperature Range

-40 to + 150
  Soldering Temperature for 10 seconds
300
  Mounting Torque, 6-32 or M3 Screw

10lb. in (1.1N m)
N



Description

This IGBT IRGP4065PbF is specifically designed for applications in Plasma Display Panels. The IRGP4065PbF utilizes advanced trench IGBT gy to achieve low V CE(on)  and low EPULSE TM rating per silicon area which improve panel  efficiency. Additional features re 150 operating junction temperature and high repetitive peak curren capability. The IRGP4065PbF features combine to make this T a highly efficient, robust and reliable device for PDP pplications.




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