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IRGP4065DPBF

IGBT PDP N-CH 300V 70A TO-247AC

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SeekIC No. : 003434409 Detail

IRGP4065DPBF: IGBT PDP N-CH 300V 70A TO-247AC

IRGP4065DPBF Data Sheet

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Part Number:
IRGP4065DPBF
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: - Manufacturer: International Rectifier
IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 300V
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A Current - Collector (Ic) (Max): 70A
Power - Max: 160W Continuous Drain Current : 64 A
Input Type: Standard Mounting Type: Through Hole
Package / Case: TO-247-3 Supplier Device Package: TO-247AC    

Description

Series: -
Manufacturer: International Rectifier
Input Type: Standard
IGBT Type: Trench
Mounting Type: Through Hole
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 70A
Power - Max: 160W
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Packaging: Bulk
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A


Features:

· Advanced Trench IGBT Technology
· Optimized for Sustain and Energy Recovery Circuits in PDP Applications
· Low VCE(on) and Energy per Pulse (EPULSETM) ICfor Improved Panel Efficiency
· High Repetitive Peak Current Capability
· Lead Free Package



Specifications
Parameter
Max.
Units
VGE
 Gate-to-Emitter Voltage
±30
V
IC@ TC = 25
 Continuous Collector Current VGE @ 15V
70
A
IC@ TC = 100
 Continuous Collector, VGE @15V
40
IRP @ TC = 25
 Repetitive Peak Current 
205
PD @ TC = 25
 Power Dissipation
160
W
PD @ TC = 100
 Linear Derating Factor
63
 Linear Derating Factor
1.3
W/
VGS
 Gate-to-Source Voltage
±30
V
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-40 to + 150
Soldering Temperature, for 10 seconds
300
Mounting torque, 6-32 or M3 screw
10 lbf.in (1.1N.m)
N





Description

This IGBT IRGP4065DPbF is specifically designed for applications in Plasma Display Panels. The IRGP4065DPbF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150operating junction temperature and high repetitive peak current capability. The IRGP4065DPbF features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.




Parameters:

Technical/Catalog InformationIRGP4065DPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)300V
Current - Collector (Ic) (Max)70A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 70A
Power - Max160W
Mounting TypeThrough Hole
Package / CaseTO-247-3 (TO-247AC, Straight Leads)
PackagingBag
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRGP4065DPBF
IRGP4065DPBF



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