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IRGP30B60KD-E

Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.• TO-247AD PackageSpecifications P...

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SeekIC No. : 004377855 Detail

IRGP30B60KD-E: Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10s Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristi...

IRGP30B60KD-E Data Sheet

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Part Number:
IRGP30B60KD-E
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-247AD Package




Specifications

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25 Continuous Collector Current 60 A
IC @ TC = 100 Continuous Collector Current 30
ICM Pulsed Collector Current 120
ILM Clamped Inductive Load Current 120
IF @ TC = 25 Diode Continuous Forward Current 60
IF @ TC = 100 Diode Continuous Forward Current 30
IFM Diode Maximum Forward Current 120
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25 Maximum Power Dissipation 304 W
PD @ TC = 100 Maximum Power Dissipation 122
TJ,TSTG Operating Junction and Storage Temperature Range -55 to +150
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf•in (1.1N•m)





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