IGBT Transistors
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Features: • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit ca...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1.2 KV |
Collector-Emitter Saturation Voltage : | 2.28 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Continuous Collector Current at 25 C : | 60 A | Power Dissipation : | 300 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247 |
Packaging : | Tube |
Parameter | Max. | Units | |
VCES | Collector-to-Emitter Breakdown Voltage | 1200 | V |
IC @ TC = 25°C | Continuous Collector Current (Fig.1) | 60 | A |
IC @ TC = 100°C | Continuous Collector Current (Fig.1) | 30 | |
ICM | Pulsed Collector Current (Fig.3, Fig. CT.5) | 120 | |
ILM | Clamped Inductive Load Current(Fig.4, Fig. CT.2) | 120 | |
IF @ TC = 100°C | Diode Continuous Forward Current | 30 | |
IFM | Diode Maximum Forward Current | 120 | |
VGE | Gate-to-Emitter Voltage | ± 20 | V |
PD @ TC = 25°C | Maximum Power Dissipation (Fig.2) | 300 | W |
PD @ TC = 100°C | Maximum Power Dissipation (Fig.2) | 120 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | °C |
Soldering Temperature, for 10 seconds | 300, (0.063 in. (1.6mm) from case) | ||
Mounting Torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
Technical/Catalog Information | IRGP30B120KD-EP |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 60A |
Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 60A |
Power - Max | 300W |
Mounting Type | Through Hole |
Package / Case | TO-247-3 (TO-247AD, Straight Leads) |
Packaging | Bag |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRGP30B120KD EP IRGP30B120KDEP |