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IRGP30B120KD-E

Features: • Low VCE(on) Non Punch Through (NPT) Technology• Low Diode VF (1.76V Typical @ 25A & 25)• 10 s Short Circuit Capability• Square RBSOA• Ultrasoft Diode Recovery Characteristics• Positive VCE(on) Temperature Coefficient• Extended Lead TO-247AD...

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IRGP30B120KD-E: Features: • Low VCE(on) Non Punch Through (NPT) Technology• Low Diode VF (1.76V Typical @ 25A & 25)• 10 s Short Circuit Capability• Square RBSOA• Ultrasoft Diode Re...

IRGP30B120KD-E Data Sheet

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Part Number:
IRGP30B120KD-E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Low VCE(on) Non Punch Through (NPT) Technology
• Low Diode VF (1.76V Typical @ 25A & 25)
• 10 s Short Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package


Application

• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting


Specifications

  Parameter
Max.
Units
VCES Collector-to-Emitter Breakdown Voltage
1200
V
IC @ TC = 25 Continuous Collector Current (Fig.1)
60
V
IC @ TC = 100 Continuous Collector Current (Fig.1)
30
ICM Pulsed Collector Current (Fig.3, Fig. CT.5)
120
ILM Clamped Inductive Load Current(Fig.4, Fig. CT.2)
120
IF @ TC = 100 Diode Continuous Forward Current
30
IFM Diode Maximum Forward Current
120
VGE Gate-to-Emitter Voltage
± 20
PD @ TC = 25 Maximum Power Dissipation (Fig.2)
300
W
PD @ TC = 100 Maximum Power Dissipation (Fig.2)
120
TJ,TSTG Operating Junction and Storage Temperature Range
-55 to + 150
  Soldering Temperature, for 10 seconds
300, (0.063 in. (1.6mm) from case)
  Mounting Torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)



Description

 


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