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IRGP20B60PD

Features: •NPT Technology, Positive Temperature Coefficient•Lower VCE(SAT)•Lower Parasitic Capacitances•Minimal Tail Current•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode•Tighter Distribution of Parameters•Higher ReliabilityApplication•Telecom and S...

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IRGP20B60PD: Features: •NPT Technology, Positive Temperature Coefficient•Lower VCE(SAT)•Lower Parasitic Capacitances•Minimal Tail Current•HEXFRED Ultra Fast Soft-Recovery Co-Pack Di...

IRGP20B60PD Data Sheet

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Part Number:
IRGP20B60PD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

•NPT Technology, Positive Temperature Coefficient
•Lower VCE(SAT)
•Lower Parasitic Capacitances
•Minimal Tail Current
•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
•Tighter Distribution of Parameters
•Higher Reliability


Application

•Telecom and Server SMPS
•PFC and ZVS SMPS Circuits
•Uninterruptable Power Supplies
•Consumer Electronics Power Supplies


Specifications

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IF@ TC= 25° CContinuous Collector Current 40 A
IF@ TC= 100° CContinuous Collector Current 22 A
ICM Pulsed Collector Current 80 A
ICM Clamped Inductive Load Current 80 A
IF@ TC= 25° 31 A
IF@ TC= 100° CDiode Continuous Forward Current 12 A
LSM Diode Maximum Forward Current 42 A
VGE Gate-to-Emitter Voltage ± 20 V
PD@ TC= 25° CMaximum Power Dissipation 220 W
PD@ TC= 100° CMaximum Power Dissipation 86 W
TJ
TSTG

Operating Junction and

Storage Temperature Range

 -55 to +150 °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)



Description

•Parallel Operation for Higher Current Applications
•Lower Conduction Losses and Switching Losses
•Higher Switching Frequency up to 150kHz

IRGP20B60PD




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