Features: •NPT Technology, Positive Temperature Coefficient•Lower VCE(SAT)•Lower Parasitic Capacitances•Minimal Tail Current•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode•Tighter Distribution of Parameters•Higher ReliabilityApplication•Telecom and S...
IRGP20B60PD: Features: •NPT Technology, Positive Temperature Coefficient•Lower VCE(SAT)•Lower Parasitic Capacitances•Minimal Tail Current•HEXFRED Ultra Fast Soft-Recovery Co-Pack Di...
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Features: • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit ca...
Parameter | Max. | Units | |
VCES | Collector-to-Emitter Voltage | 600 | V |
IF@ TC= 25° | CContinuous Collector Current | 40 | A |
IF@ TC= 100° | CContinuous Collector Current | 22 | A |
ICM | Pulsed Collector Current | 80 | A |
ICM | Clamped Inductive Load Current | 80 | A |
IF@ TC= 25° | 31 | A | |
IF@ TC= 100° | CDiode Continuous Forward Current | 12 | A |
LSM | Diode Maximum Forward Current | 42 | A |
VGE | Gate-to-Emitter Voltage | ± 20 | V |
PD@ TC= 25° | CMaximum Power Dissipation | 220 | W |
PD@ TC= 100° | CMaximum Power Dissipation | 86 | W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) |
•Parallel Operation for Higher Current Applications
•Lower Conduction Losses and Switching Losses
•Higher Switching Frequency up to 150kHz
IRGP20B60PD