IRFSL33N15DTRRP

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 90nC @ 10V
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 33A
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 3.8W
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 2020pF @ 25V


Parameters:

Technical/Catalog Information	IRFSL33N15DTRRP
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	33A
Rds On (Max) @ Id, Vgs	56 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	2020pF @ 25V
Power - Max	3.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	90nC @ 10V
Package / Case	TO-262
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFSL33N15DTRRP IRFSL33N15DTRRP