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IRFS634B_FP001

MOSFET 250V N-Channel B-FET

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SeekIC No. : 00159955 Detail

IRFS634B_FP001: MOSFET 250V N-Channel B-FET

IRFS634B_FP001 Data Sheet

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Part Number:
IRFS634B_FP001
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8.1 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 8.1 A
Resistance Drain-Source RDS (on) : 0.45 Ohms


Parameters:

Technical/Catalog InformationIRFS634B_FP001
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C8.1A
Rds On (Max) @ Id, Vgs450 mOhm @ 4.05A, 10V
Input Capacitance (Ciss) @ Vds 1000pF @ 25V
Power - Max38W
PackagingTube
Gate Charge (Qg) @ Vgs38nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFS634B_FP001
IRFS634B_FP001



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