IRFS624B

Features: • 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V• Low gate charge ( typical 13.5 nC)• Low Crss ( typical 9.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRF624B IRFS624B Units VDSS Drai...

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SeekIC No. : 004377437 Detail

IRFS624B: Features: • 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V• Low gate charge ( typical 13.5 nC)• Low Crss ( typical 9.5 pF)• Fast switching• 100% avalanche tested• Improved...

floor Price/Ceiling Price

Part Number:
IRFS624B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V
• Low gate charge ( typical 13.5 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter
IRF624B
IRFS624B
Units
VDSS Drain-Source Voltage
250
V
ID Drain Current
- Continuous (TC = 25mJ)
- Continuous (TC = 100mJ)
4.1
4.1*
A
2.6
2.6*
A
IDM Drain Current
- Pulsed                                           (Note 1)
16.4
16.4*
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy     (Note 2)
75
mJ
IAR Avalanche Current                         (Note 1)
4.1
A
EAR Repetitive Avalanche Energy         (Note 1)
4.9
mJ
dv/dt Peak Diode Recovery dv/dt           (Note 3)
5.5
V/ns
PD Power Dissipation (TC = 25mJ)
- Derate above 25mJ
49
34
W
0.39
0.27
W/
TJ,TSTG Operating and Storage Temperature Range
-55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
* Drain current limited by maximum junction temperature


Description

These N-Channel enhancement mode power field effect transistors of IRFS624B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of IRFS624B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.




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