Features: • 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V• Low gate charge ( typical 13.5 nC)• Low Crss ( typical 9.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRF624B IRFS624B Units VDSS Drai...
IRFS624B: Features: • 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V• Low gate charge ( typical 13.5 nC)• Low Crss ( typical 9.5 pF)• Fast switching• 100% avalanche tested• Improved...
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Symbol | Parameter |
IRF624B |
IRFS624B |
Units |
VDSS | Drain-Source Voltage |
250 |
V | |
ID | Drain Current - Continuous (TC = 25mJ) - Continuous (TC = 100mJ) |
4.1 |
4.1* |
A |
2.6 |
2.6* |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
16.4 |
16.4* |
A |
VGSS | Gate-Source Voltage |
± 30 |
V | |
EAS | Single Pulsed Avalanche Energy (Note 2) |
75 |
mJ | |
IAR | Avalanche Current (Note 1) |
4.1 |
A | |
EAR | Repetitive Avalanche Energy (Note 1) |
4.9 |
mJ | |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
PD | Power Dissipation (TC = 25mJ) - Derate above 25mJ |
49 |
34 |
W |
0.39 |
0.27 |
W/ | ||
TJ,TSTG | Operating and Storage Temperature Range |
-55 to +150 |
||
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
These N-Channel enhancement mode power field effect transistors of IRFS624B are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology of IRFS624B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.