Features: • 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 10 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRF620B IRFS620B Units VDSS Drain-Sourc...
IRFS620B: Features: • 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 10 pF)• Fast switching• 100% avalanche tested• Improved dv...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter | IRF620B | IRFS620B | Units | |
VDSS | Drain-Source Voltage | 200 | V | ||
ID | Drain Current | - Continuous (TC = 25°C) | 5.0 | 5.0 * | A |
- Continuous (TC = 100°C) | 3.2 | 3.2* | A | ||
IDM | Drain Current - Pulsed (Note 1) | 18 | 18* | A | |
VGSS | Gate-Source Voltage | ± 30 | V | ||
EAS | Single Pulsed Avalanche Energy (Note 2) | 65 | mJ | ||
IAR | Avalanche Current (Note 1) | 5.0 | A | ||
EAR | Repetitive Avalanche Energy (Note 1) | 4.7 | mJ | ||
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | ||
PD | Power Dissipation (TC = 25°C) | 47 | 32 | W | |
- Derate above 25°C | 0.38 | 0.25 | W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C | ||
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
These N-Channel enhancement mode power field effect transistors of IRFS620B are produced using Fairchild's proprietary,planar, DMOS technology.
This advanced technology IRFS620B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.