IRFS59N10DTRRP

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)Alternate Packaging
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 59A
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 3.8W
Gate Charge (Qg) @ Vgs: 114nC @ 10V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V
Input Capacitance (Ciss) @ Vds: 2450pF @ 25V


Parameters:

Technical/Catalog Information	IRFS59N10DTRRP
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	59A
Rds On (Max) @ Id, Vgs	25 mOhm @ 35.4A, 10V
Input Capacitance (Ciss) @ Vds	2450pF @ 25V
Power - Max	3.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	114nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFS59N10DTRRP IRFS59N10DTRRP