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IRFS540A

MOSFET 100V N-Channel A-FET

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SeekIC No. : 00163844 Detail

IRFS540A: MOSFET 100V N-Channel A-FET

IRFS540A Data Sheet

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Part Number:
IRFS540A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.052 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 18 A
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.052 Ohms


Features:

`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`175 Operating Temperature
`Lower Leakage Current : 10 A (Max.) @ VDS = 100V
`Lower RDS(ON) : 0.041 (Typ.)


Specifications

SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 100 V
ID Continuous Drain Current (TC=25 ) 17 A
Continuous Drain Current (TC=100) 12 A
IDM Drain Current-Pulsed 110 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 385 mJ
IAR Avalanche Current 17 A
EAR Repetitive Avalanche Energy 3.9 mJ
dv/dt Peak Diode Recovery dv/dt 6.5 V/ns
PD Total Power Dissipation (TC=25)
Linear Derating Factor		 39
0.26		 W
TJ , TSTG Operating Junction and
Storage Temperature Range		 - 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds		 300



Parameters:

Technical/Catalog InformationIRFS540A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs52 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds 1710pF @ 25V
Power - Max39W
PackagingTube
Gate Charge (Qg) @ Vgs78nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFS540A
IRFS540A



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