IRFS520A

MOSFET 100V N-Channel A-FET

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SeekIC No. : 00161823 Detail

IRFS520A: MOSFET 100V N-Channel A-FET

floor Price/Ceiling Price

Part Number:
IRFS520A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7.2 A
Resistance Drain-Source RDS (on) : 0.2 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.2 Ohms
Continuous Drain Current : 7.2 A


Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 Operating Temperature
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.155 (Typ.)



Specifications

Symbol
Characteristic
Value
Unit
VDSS
Drain-to-Source Voltage
100
V
ID
Continuous Drain Current (TC=25)
7.2
A
Continuous Drain Current (TC=100)

5.1

A
IDM
Drain Current-Pulsed 1
37
A
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulsed Avalanche Energy 2
104
mJ
IAR
Avalanche Current 1
7.2
A
EAR
Repetitive Avalanche Energy 1
2.8
mJ
dv/dt
Peak Diode Recovery dv/dt 3
6.5
V/ns
PD
Total Power Dissipation (TC=25)
Linear Derating Factor
28
0.19
W
W/
TJ,TSTG
Operating Junction and
Storage Temperature Range
- 55 to +175
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300
Notes ;
1.Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
2.L=3mH, IAS=7.2A, VDD=25V, RG=27 , Starting TJ =25
3.ISD 9.2A, di/dt 300A/ s, VDD BVDSS , Starting TJ =25



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