MOSFET 100V N-Channel A-FET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 7.2 A | ||
Resistance Drain-Source RDS (on) : | 0.2 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220F | Packaging : | Tube |
Symbol |
Characteristic |
Value |
Unit |
VDSS |
Drain-to-Source Voltage |
100 |
V |
ID |
Continuous Drain Current (TC=25) |
7.2 |
A |
Continuous Drain Current (TC=100) |
5.1 |
A | |
IDM |
Drain Current-Pulsed 1 |
37 |
A |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulsed Avalanche Energy 2 |
104 |
mJ |
IAR |
Avalanche Current 1 |
7.2 |
A |
EAR |
Repetitive Avalanche Energy 1 |
2.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt 3 |
6.5 |
V/ns |
PD |
Total Power Dissipation (TC=25) Linear Derating Factor |
28 0.19 |
W W/ |
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |