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IRFS510A

MOSFET 100V N-Channel A-FET

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SeekIC No. : 00162510 Detail

IRFS510A: MOSFET 100V N-Channel A-FET

IRFS510A Data Sheet

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Part Number:
IRFS510A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220F
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`175 Operating Temperature
`Lower Leakage Current : 10 A (Max.) @ VDS = 100V
`Lower RDS(ON) : 0.289 (Typ.)


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 100 V
ID Continuous Drain Current (TC=25 ) 4.5 A
Continuous Drain Current (TC=100 ) 3.2 A
IDM Drain Current-Pulsed 20 A
VGS Gate-to-Source Voltage ±` 20 V
EAS Single Pulsed Avalanche Energy 54 mJ
IAR Avalanche Current  4.5 A
EAR Repetitive Avalanche Energy 2.1 mJ
dv/dt Peak Diode Recovery dv/dt 6.5 V/ns
PD Total Power Dissipation (TC=25 )
Linear Derating Factor		 21
0.14		 W/
TJ,TSTG Operating Junction and
Storage Temperature Range		 - 55 to +175
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300



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