Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.31 Ohms
Package / Case
: TO-3PF
Continuous Drain Current
: 9.6 A
Features: `9.6A, 500V, RDS(on) = 0.39 @VGS = 10 V
`Low gate charge ( typical 87 nC)
`Low Crss ( typical 60 pF)
`Fast switching
`100% avalanche tested
`Improved dv/dt capabilitySpecifications
|
Symbol |
Parameter |
IRFP250B |
Units |
|
VDSS |
Drain-Source Voltage |
500 |
V |
|
ID |
Drain Current
- Continuous (TC= 25)
- Continuous (TC= 100) |
9.6
6.1 |
A
A |
|
IDM
VGSS
EAS
IAR
EAR
dv/dt |
Drain Current- Pulsed(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy(Note 2)
Avalanche Current(Note 1)
Repetitive Avalanche Energy(Note 1)
Peak Diode Recovery dv/dt(Note 3) |
38.4
±30
990
9.6
9.6
5.5 |
A
V
mJ
A
mJ
V/ns
W |
|
PD |
Power Dissipation (TC= 25)
- Derate above 25 |
96
0.77 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
|
TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
|
| |
Parameter |
Typ. |
Max. |
Units |
|
RJC
RJA |
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient |
-
- |
1.3
40 |
/W |
DescriptionThese N-Channel enhancement mode power field effect transistors IRFS450B are produced using Fairchild's proprietary planar, DMOS technology.
This advanced technology IRFS450B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Parameters: | Technical/Catalog Information | IRFS450B |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 9.6A |
| Rds On (Max) @ Id, Vgs | 390 mOhm @ 4.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 3800pF @ 25V |
| Power - Max | 96W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 113nC @ 10V |
| Package / Case | TO-3PF |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFS450B
IRFS450B
|
IRFS450B Data Sheet
