Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· Lower Leakage Current: 10mA (Max.) @ VDS = 500V·Lower RDS(ON): 0.308W (Typ.)Specifications Parameter Symbol Maximum Units Drain-Source Volt...
IRFS450A: Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· Lower Leakage Current: 10mA (Max.) @ VDS = 500V·Lo...
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Parameter | Symbol | Maximum | Units | |
Drain-Source Voltage | VDSS | 500 | V | |
Gate-Source Voltage | VGS | ±30 | V | |
Continuous Drain Current B | TC=25 | ID | 9.6 |
A |
TC=100 | 6.1 | |||
Drain Current-Pulsed (1) | IDM | 56 | ||
Avalanche Current (1) | IAR | 9.6 | A | |
Repetitive avalanche energy (1) | EAR | 9.6 | mJ | |
Single Pulsed Avalanche Energy (2) | EAS | 1024 | mJ | |
Peak diode recovery dv/dt | dv/dt | 3.5 | V/ns | |
Total Power Dissipation (TC=25) Linear Derating Factor |
PD | 96 | W | |
0.77 | W/ | |||
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds |
TL | 300 | ||
Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 |