IRFS440B

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 6.2 A
Package / Case : TO-3PF
Resistance Drain-Source RDS (on) : 0.65 Ohms


Features:

• 6.2A, 500V, RDS(on) = 0.8 @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter		IRFS440B	Units
VDSS	Drain-Source Voltage		500	V
ID	Drain Current	- Continuous (TC = 25) - Continuous (TC = 100)	6.2	A
			3.9	A
IDM	Drain Current - Pulsed(Note 1)		24.8	A
VGSS	Gate-Source Voltage		± 30	V
EAS	Single Pulsed Avalanche Energy(Note 2)		320	mJ
IAR	Avalanche Current(Note 1)		6.2	A
EAR	Repetitive Avalanche Energy(Note 1)		8.5	mJ
dv/dt	Peak Diode Recovery dv/dt(Note 3)		5.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C		85	W
			0.68	W/
TJ, TSTG	Operating and Storage Temperature Range		-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology IRFS440B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. TehranIRFS440B is well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.