MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V |
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 83 A |
Mounting Style : | SMD/SMT | Package / Case : | D2PAK |
Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
83 |
A |
ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
59 | |
IDM |
Pulse Drain Current |
330 | |
PD @ TC = 25 |
Maximum Power Dissipation |
330 |
W |
Linear Derating Factor |
2.2 |
W/ | |
VGS |
Gate-to-Source Voltage |
± 30 |
V |
EAS (Thermally limited) | Single Pulse Avalanche Energy |
120 |
mJ |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +175 |
|
Soldering Temperature, for 10 sec. (1.6mm from case) |
300 |
Technical/Catalog Information | IRFS4321PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 83A |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 33A, 10V |
Input Capacitance (Ciss) @ Vds | 4460pF @ 25V |
Power - Max | 330W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 110nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFS4321PBF IRFS4321PBF |