MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 62 A | ||
Resistance Drain-Source RDS (on) : | 26 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Parameter | Max. | Units | |
VGS | Gate-to-Source Voltage | ±30 | V |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 62 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 44 | |
IDM | Pulsed Drain Current | 260 | |
IRP @ TC =100 | Repetitive Peak Current | 130 | |
PD @ TC = 25 | Power Dissipation | 330 | W |
PD @ TC = 25 | Power Dissipation | 190 | |
Linear Derating Factor | 2.2 | W/ | |
TJ TSTG |
Operating Junction Storage Temperature Range |
-40 to 175 | |
Soldering Temperature, for 10 seconds | 300 | ||
Mounting Torque, 6-32 or M3 Screw | 10lb`in (1.1N`m)) | N |
Technical/Catalog Information | IRFS4227PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 62A |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 46A, 10V |
Input Capacitance (Ciss) @ Vds | 4600pF @ 25V |
Power - Max | 330W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 98nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFS4227PBF IRFS4227PBF |