IRFS340B

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.54 Ohms
Continuous Drain Current : 8 A
Package / Case : TO-3PF
Drain-Source Breakdown Voltage : 400 V


Features:

`8A, 400V, R<sub>DS(on)</sub> = 0.54 @V<sub>GS</sub> = 10 V 
`Low gate charge ( typical  41 nC)
`Low Crss ( typical  35 pF)
`Fast switching
`100% avalanche tested
`Improved dv/dt capability


Specifications

Symbol	Parameter	IRFP250B	Units
VDSS	Drain-Source Voltage	400	V
ID	Drain Current - Continuous (TC= 25) - Continuous (TC= 100)	8.0 5.1	A A
IDM VGSS EAS IAR EAR dv/dt	Drain Current- Pulsed(Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy(Note 2) Avalanche Current(Note 1) Repetitive Avalanche Energy(Note 1) Peak Diode Recovery dv/dt(Note 3)	32 ±30 450 8.0 8.5 5.5	A V mJ A mJ V/ns W
PD	Power Dissipation (TC= 25) - Derate above 25	85 0.68	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

	Parameter	Typ.	Max.	Units
RJC RJA	Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient	- -	1.46 40	/W

Description

These N-Channel enhancement mode power field effect transistors of the IRFS340B are produced using Fairchild's proprietary planar, DMOS technology.

This advanced technology of the IRFS340B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.