MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 33 A | ||
Resistance Drain-Source RDS (on) : | 56 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 33 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 24 | |
IDM | Pulsed Drain Current | 130 | |
PD @TA = 25 | Power Dissipation | 3.8 | W |
PD @TC = 25 | Power Dissipation | 170 | |
Linear Derating Factor | 1.1 | W/ | |
VGS | Gate-to-Source Voltage | ± 30 | V |
dv/dt | Peak Diode Recovery dv/dt | 4.4 | V/ns |
TJ | Operating Junction and |
-55 to + 175 | |
TSTG | Storage Temperature Range | ||
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
Technical/Catalog Information | IRFS33N15DPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 33A |
Rds On (Max) @ Id, Vgs | 56 mOhm @ 20A, 10V |
Input Capacitance (Ciss) @ Vds | 2020pF @ 25V |
Power - Max | 3.8W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 90nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFS33N15DPBF IRFS33N15DPBF |