Position: Home  > All Categories> Integrated Circuits (ICs) > IRFS254B

IRFS254B

Features: • 16A, 250V, RDS(on) = 0.14 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityPinoutSpecifications Symbol Parameter IRFS254B Units VDSS Drain-Source Vol...

product image

IRFS254B Picture
See larger image
SeekIC No. : 004377406 Detail

IRFS254B: Features: • 16A, 250V, RDS(on) = 0.14 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv...

IRFS254B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFS254B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 16A, 250V, RDS(on) = 0.14 @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Pinout

Connection Diagram


Specifications

Symbol Parameter IRFS254B Units
VDSS Drain-Source Voltage 250 V
ID Drain Current - Continuous (TC = 25)
                      - Continuous (TC = 100)		 16 A
10.1 A
IDM Drain Current - Pulsed (Note 1) 64 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 700 mJ
IAR Avalanche Current (Note 1) 16 A
EAR Repetitive Avalanche Energy (Note 1) 9.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25) 
                        - Derate above 25		 90 W
0.72 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300



Description

These N-Channel enhancement mode power field effect transistors of the IRFS254B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of the IRFS254B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Discrete Semiconductor Products
T508N12TOF
MUR20040
Kits
IT243
UVSC-110-4E1
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
View more