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IRFS254B

Features: • 16A, 250V, RDS(on) = 0.14 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityPinoutSpecifications Symbol Parameter IRFS254B Units VDSS Drain-Source Vol...

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SeekIC No. : 004377406 Detail

IRFS254B: Features: • 16A, 250V, RDS(on) = 0.14 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv...

IRFS254B Data Sheet

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Part Number:
IRFS254B
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 16A, 250V, RDS(on) = 0.14 @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Pinout

Connection Diagram


Specifications

Symbol Parameter IRFS254B Units
VDSS Drain-Source Voltage 250 V
ID Drain Current - Continuous (TC = 25)
                      - Continuous (TC = 100)		 16 A
10.1 A
IDM Drain Current - Pulsed (Note 1) 64 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 700 mJ
IAR Avalanche Current (Note 1) 16 A
EAR Repetitive Avalanche Energy (Note 1) 9.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25) 
                        - Derate above 25		 90 W
0.72 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300



Description

These N-Channel enhancement mode power field effect transistors of the IRFS254B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of the IRFS254B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.




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