Features: • 21.3A, 200V, RDS(on) = 0.085 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 75 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFS250B Units VDSS Drain-Source Voltag...
IRFS250B: Features: • 21.3A, 200V, RDS(on) = 0.085 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 75 pF)• Fast switching• 100% avalanche tested• Improved...
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Symbol | Parameter | IRFS250B | Units |
VDSS | Drain-Source Voltage | 200 | V |
ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
21.3 | A |
13.5 | A | ||
IDM | Drain Current - Pulsed (Note 1) | 85 | A |
VGSS | Gate-Source Voltage | ± 30 | V |
EAS | Single Pulsed Avalanche Energy (Note 2) | 600 | mJ |
IAR | Avalanche Current (Note 1) | 21.3 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 9.0 | mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
PD | Power Dissipation (TC = 25) - Derate above 25 |
90 | W |
0.72 | W/ | ||
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
These N-Channel enhancement mode power field effect transistors of the IRFS250B are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology of the IRFS250B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.