Position: Home  > All Categories> Integrated Circuits (ICs) > IRFS250B

IRFS250B

Features: • 21.3A, 200V, RDS(on) = 0.085 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 75 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFS250B Units VDSS Drain-Source Voltag...

product image

IRFS250B Picture
See larger image
SeekIC No. : 004377405 Detail

IRFS250B: Features: • 21.3A, 200V, RDS(on) = 0.085 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 75 pF)• Fast switching• 100% avalanche tested• Improved...

IRFS250B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFS250B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 21.3A, 200V, RDS(on) = 0.085 @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 75 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRFS250B Units
VDSS Drain-Source Voltage 200 V
ID Drain Current - Continuous (TC = 25)
                      - Continuous (TC = 100)		 21.3 A
13.5 A
IDM Drain Current - Pulsed (Note 1) 85 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 600 mJ
IAR Avalanche Current (Note 1) 21.3 A
EAR Repetitive Avalanche Energy (Note 1) 9.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25)
                          - Derate above 25		 90 W
0.72 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300



Description

These N-Channel enhancement mode power field effect transistors of the IRFS250B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of the IRFS250B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Transformers
TM-09210
BV222-1-00992
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Discrete Semiconductor Products
T508N12TOF
MUR20040
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
View more