Features: `10.2A, 250V, RDS(on) = 0.28 @VGS= 10 V`Low gate charge ( typical 47 nC)`Low Crss ( typical 30 pF)`Fast switching`100% avalanche tested`Improved dv/dt capabilitySpecifications Symbol Parameter IRFP250B Units VDSS Drain-Source Voltage 250 V ID Drain Curre...
IRFS244B: Features: `10.2A, 250V, RDS(on) = 0.28 @VGS= 10 V`Low gate charge ( typical 47 nC)`Low Crss ( typical 30 pF)`Fast switching`100% avalanche tested`Improved dv/dt capabilitySpecifications Symbo...
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Symbol |
Parameter |
IRFP250B |
Units |
VDSS |
Drain-Source Voltage |
250 |
V |
ID |
Drain Current - Continuous (TC= 25) - Continuous (TC= 100) |
10.2 6.5 |
A A |
IDM VGSS EAS IAR EAR dv/dt |
Drain Current- Pulsed(Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy(Note 2) Avalanche Current(Note 1) Repetitive Avalanche Energy(Note 1) Peak Diode Recovery dv/dt(Note 3) |
40.8 ±30 480 10.2 7.3 5.5 |
A V mJ A mJ V/ns W |
PD |
Power Dissipation (TC= 25) - Derate above 25 |
73 0.59 |
W/ |
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
Parameter |
Typ. |
Max. |
Units | |
RJC RJA |
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient |
- - |
1.7 40 |
/W |
These N-Channel enhancement mode power field effect transistors of the IRFS244B are produced using Fairchild's proprietary planar, DMOS technology.
This advanced technology of the IRFS244B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.