IRFS23N15D

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Gate Charge (Qg) @ Vgs: 56nC @ 10V
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Input Capacitance (Ciss) @ Vds: 1200pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 23A
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 90 mOhm @ 14A, 10V


Application

 High frequency DC-DC converters


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	23	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	17
IDM	Pulsed Drain Current	92
PD @TA = 25°C	Power Dissipation	3.8	W
PD @TC = 25°C	Power Dissipation	136
	Linear Derating Factor	0.9	W/°C
VGS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	4.1	V/ns
TJ	Operating Junction and	-55 to + 175	°C
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torqe, 6-32 or M3 screw	10 lbf•in (1.1N•m)