Position: Home  > All Categories> Integrated Circuits (ICs) > IRFBE30LPBF

IRFBE30LPBF

MOSFET N-Chan 800V 4.1 Amp

product image

IRFBE30LPBF Picture
See larger image
SeekIC No. : 00146869 Detail

IRFBE30LPBF: MOSFET N-Chan 800V 4.1 Amp

IRFBE30LPBF Data Sheet

floor Price/Ceiling Price

US $ 1.1~1.7 / Piece | Get Latest Price
Part Number:
IRFBE30LPBF
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.7
  • $1.37
  • $1.24
  • $1.1
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.1 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-262
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 4.1 A
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

􀁏 ·Dynamic dv/dt Rating
􀁏 ·Repetitive Avalanche Rated
􀁏 ·Fast Switching
􀁏 ·Ease of Paralleling
􀁏 ·Simple Drive Requirements
􀁏 ·Lead-Free


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 4.1 A
ID @ TC =100 Continuous Drain Current, VGS @ 10V 2.6
IDM Pulsed Drain Current   􀀀 16
PD @TC = 25 Maximum Power Dissipation 125 W
  Linear Derating Factor 1.0 W/
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 260 mJ
IAR Avalanche Current 􀀀 4.1 A
EAR Repetitive Avalanche Energy 􀀀 13 mJ
dv/dt Peak Diode Recovery dv/dt 2.0 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -55 to + 150  
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)  



Description

Third Generation HEXFETs of the IRFBE30LPbF from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Optoelectronics
SFH7770
TLP423J
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Switches
US32DMRJ
HBGQ22P-11ET
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
View more