IRFBC42

Features:

• 6.2A and 5.4A, 600V
• rDS(ON) = 1.2 and 1.6
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
   - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

		IRFBC40	IRFBC42	UNITS
Drain to Source Breakdown Voltage (Note 1)	VDS	600	600	V
Drain to Gate Voltage (RGS = 20kW) (Note 1)	VDGR	600	600	V
Continuous Drain Current	ID	6.2	5.4	A
TC = 100oC	ID	3.9	3.4	A
Pulsed Drain Current (Note 2)	IDM	25	22	A
Gate to Source Voltage	VGS	±20	±20	V
Maximum Power Dissipation	PD	125	125	W
Linear Derating Factor		1.0	1.0	W/oC
Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16) .	EAS	570	570	mJ
Operating and Storage Temperature.	TJ, TSTG	-55 to 150	-55 to 150	oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s	TL	300	300	oC
Package Body for 10s, See Techbrief 334.	Tpkg	260	260	oC

Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed of the IRFBC42, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type IRFBC42.