IRFBC40S/LPbF

      Third generation HEXFETs IRFBC40S/LPbF from international Rectifier provide the designer with the best combination of fastswitching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is surface mount power package capable of the accomodatingdie sizes up to HEX-4. It provides the highest power capcability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version(IRFBC40L) is availiable for low-profile applications.
      IRFBC40S/LPbF has eight unique features which is as follows: The first one is surface mount(IREBC40S). The second one is low-profile through-hole(IREBC40L). The third one is it is available in tape & reel(IRFBC40S). The forth one is dynamic dv/dt rating. The fifth one is 150 operating temperature. The sixth one is fast switching. The seventh one is fully avalanche rated.The eighth one is lead-free.
      Otherwise, we should also know more about IRFBC40S/LPbF other specifications. At the very beginning , we should know more about its absolute maximum ratings. Continuous drain current(I_D) is 6.2 A max when Tc is 25 and VGS is 10 V. Continuous drain current(I_D) is 3.9 A max when Tc is 100 and VGS is 10 V. Pulsed drain current is 25 A under the special condition. Power dissipation (P_D)is 3.1 W when Ta is 25. Power dissipation(P_D) is 130 W  when Ta is 25. Linear derating factor is 1.0 W/. Gate-to-source voltage(VGS) is ±20 V. Single pulse avalance energy(EAS) is 570mJ under the special condition. Avalance current(IAR) is 6.2 A. Operating junction and storage temeprature range are from -55 to +150. Then, we come to the electrical characteristics which is under the condtion that Tj is 25 (unless otherwise specified). Drain-to-source breakdown voltage(V_(BR)DSS) is 600 V min when VGS is 0 V and ID is 250A. Breakdown voltage temp.coefficient is 0.70 V/ when the temperature is 25 and ID is 1 mA. Static drain-to-source on-resistance(R_DS(on) ) is 1.2 when VGS is 10 V and ID is 3.7 A. Gate threshold voltage(V_GS(th)) is 2.0 V min and 4.0 V max when VDS is VGS and ID is 250 A.Forward transconductance is 4.7 S when VDS is 100 V and ID is 3.7 A. Gate-to-source forward leakage is 100 nA when VGS is 20 A.Gate-to-source forward leakage is -100 nA when VGS is -20 A. Internal source inductance(L_s) is 7.5 H typ under the condition of between lead and center of die contact.
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