MOSFET N-Chan 600V 6.2 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 6.2 A | ||
Resistance Drain-Source RDS (on) : | 1.2 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
. | Parameter | Max. | Units |
ID @ TC=25°C | Continuous Drain Current, VGS @ 10V | 6.2 | A |
ID @ TC=100°C | Continuous Drain Current, VGS @ 10V | 3.9 | |
IDM | Pulsed Drain Current | 25 | |
PD @TC = 25°C | Power Dissipation | 125 | w |
. | Linear Derating Factor | 1.0 | W/°C |
VGS | Gate-to-Source Voltage | ± 30 | V |
dv/dt | Peak Diode Recovery dv/dt | 6.0 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | °C |
. | Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |