IRFBC40AS

MOSFET N-Chan 600V 6.2 Amp

product image

IRFBC40AS Picture
SeekIC No. : 00166611 Detail

IRFBC40AS: MOSFET N-Chan 600V 6.2 Amp

floor Price/Ceiling Price

Part Number:
IRFBC40AS
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/29

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.2 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 6.2 A
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:

 Low Gate Charge Qg results in Simple Drive Requirement
 Improved Gate, Avalanche and dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage and Current
 Effective Coss Specified ( See AN 1001)



Application

Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
 High speed power switching



Specifications

. Parameter Max. Units
ID @ TC=25°C Continuous Drain Current, VGS @ 10V 6.2 A
ID @ TC=100°C Continuous Drain Current, VGS @ 10V 3.9
IDM Pulsed Drain Current 25
PD @TC = 25°C Power Dissipation 125 w
. Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 6.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150 °C
. Soldering Temperature, for 10 seconds 300 (1.6mm from case )







Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Audio Products
Tapes, Adhesives
803
Semiconductor Modules
Soldering, Desoldering, Rework Products
Resistors
View more