MOSFET N-Chan 600V 6.2 Amp
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 6.2 A | ||
Resistance Drain-Source RDS (on) : | 1.2 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ VGS=-12V,TC=25 |
Continuous Drain Curren VGS@10V |
6.2 |
A |
ID @ VGS=-12V,TC=100 |
Continuous Drain Curren VGS@10V |
3.9 | |
IDM |
Pulsed Drain Current |
25 | |
PD@ TC= 25 |
Power Dissipatio |
125 |
W |
Linear Derating Factor |
1.0 |
W/ | |
VGS |
Gate-to-Source Voltage |
±30 |
V |
dv/dt |
Peak Diode Recovery dv/dt |
6.0 |
V/nS |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
Mounting torqe, 6-32 or M3 screw |
10 lbf.in (1.1N.m) |
g |