IRFBC40A, US $ 1.49-1.59 , Vishay/Siliconix, IRFBC40A DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00158843 Detail

IRFBC40A: MOSFET N-Chan 600V 6.2 Amp

IRFBC40A Data Sheet

US $ 1.49~1.59 / Piece | Get Latest Price

Part Number:: IRFBC40A
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~725
725~1000
1000~2000

Unit Price
$1.59
$1.52
$1.49

Processing time
15 Days
15 Days
15 Days

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Upload time: 2024/11/23

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Recent History
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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	6.2 A
Resistance Drain-Source RDS (on) :	1.2 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 6.2 A
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 1.2 Ohms

Features:

Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage and Current
Effective Coss Specified ( See AN 1001)

Application

Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching

Specifications

1	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	6.2	A
I_D @ T_C =100^oC	Continuous Drain Current, V_GS @ 10V	3.9
I_DM	Pulsed Drain Current	25
P_D @T_C = 25°C	Power Dissipation	125	w
.	Linear Derating Factor	1.0	W/°C
V_GS	Gate-to-Source Voltage	± 30	V
d_v/dt	Peak Diode Recovery dv/dt	6.0	V/ns
TJ T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
.	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
.	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)	.

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IRFBC40A

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