IRFBC30PBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 2.2 Ohms


Description

The IRFBC30PbF is designed as the third generation HEXFET from international recifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

IRFBC30PbF has six features. (1)Dynamic dv/dt rating. (2)Repetitive avalanche rated. (3)Fast switching. (4)Ease of paralleling. (5)Simple drive requirements. (6)Lead-free. That are all the main features.

Some absolute maximum ratings IRFBC30PbF have been concluded into several points as follow. (1)Its continuous drain current Vgs at 10V would be 3.6A at 25°C and would be 2.3A at 100°C. (2)Its power dissipation would be 74W. (3)Its linear derating factor would be 0.59W/°C. (4)Its pulsed drain current would be 14A. (5)Its gate to source voltage would be +/-20V. (6)Its single pulse avalanche energy would be 290mJ. (7)Its avalanche current would be 3.6A. (8)Its repetitive avalanche energy would be 7.4mJ. (9)Its peak diode recovery dv/dt would be 3.0V/ns. (10)Its operating junctio and storage temperature range would be from -55°C to +150°C. (11)Its soldering temperature for 10 seconds would be 300°C (1.6mm from case). It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics IRFBC30PbF are concluded as follow. (1)Its drain to source breakdown voltage would be min 600V. (2)Its breakdown voltage temperature coefficient would be typ 0.62V/°C. (3)Its gate threshold voltage would be min 2.0V and max 4.0V. (4)Its forward transconductance would be min 2.5S. (5)Its gate to source forward leakage would be max 100nA. (6)Its gate to source reverse leakage would be max -100nA. (7)Its total gate charge would be max 31nC. (8)Its gate to source charge would be max 4.6nC. (9)Its gate to drain charge would be max 17nC. (10)Its turn-on delay time would be typ 35ns. And so on. If you have any question or suggestion or want to know more information please contact us for IRFBC30PbF details. Thank you!