MOSFET N-Chan 600V 3.6 Amp
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 3.6 A | ||
Resistance Drain-Source RDS (on) : | 2.2 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
. | Parameter | Max. | Units |
ID @ TC=25°C | Continuous Drain Current, VGS @ 10V | 3.6 | A |
ID @ TC=100°C | Continuous Drain Current, VGS @ 10V | 2.3 | |
IDM | Pulsed Drain Current | 14 | |
PD @TC = 25°C | Power Dissipation | 74 | w |
. | Linear Derating Factor | 0.69 | W/°C |
VGS | Gate-to-Source Voltage | ± 30 | V |
dv/dt | Peak Diode Recovery dv/dt | 7.0 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | °C |
. | Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |