IRFBC30A

MOSFET N-Chan 600V 3.6 Amp

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IRFBC30A Picture
SeekIC No. : 00151323 Detail

IRFBC30A: MOSFET N-Chan 600V 3.6 Amp

floor Price/Ceiling Price

US $ 2.21~3.35 / Piece | Get Latest Price
Part Number:
IRFBC30A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.35
  • $2.69
  • $2.45
  • $2.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 2.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 2.2 Ohms


Features:

Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and dynamic dv/dt Ruggedness
 Fully Characterized Capacitance and Avalanche Voltage and Current
 Effective Coss specified (See AN 1001)



Application

 Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply
 High speed power switching



Specifications

. Parameter Max. Units
ID @ TC=25°C Continuous Drain Current, VGS @ 10V 3.6 A
ID @ TC=1000 oC Continuous Drain Current, VGS @ 10V 2.3
IDM Pulsed Drain Current 14
PD @TC = 25oC Power Dissipation 74 w
. Linear Derating Factor 0.69 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150 °C
. Soldering Temperature, for 10 seconds 300 (1.6mm from case )
. Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)  



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