IRFBC20

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 4.4 Ohms


Features:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available




Specifications

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-Source Voltage			VDS	600	V
Gate-Source Voltage			VGS	± 20
Continuous Drain Current	VGS at 10 V	TC = 25	ID	2.2	A
		TC = 100		1.4
Pulsed Drain Currenta			IDM	8.0
Linear Derating Factor				0.40	W/
Single Pulse Avalanche Energyb			EAS	84	mJ
Repetitive Avalanche Currenta			IAR	2.2	A
Repetitive Avalanche Energya			EAR	5.0	mJ
Maximum Power Dissipation		TC = 25	PD	50	W
Peak Diode Recovery dV/dtc			dV/dt	3.0	V/ns
Operating Junction and Storage Temperature Range			TJ, Tstg	- 55 to +150
Soldering Recommendations (Peak Temperature)		for 10 s		300d
Mounting Torque		6-32 or M3 screw		10	lbf ` in
				1.1	N ` m

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, Starting T_J = 25 , L =31 mH, R_G = 25 , I_AS = 2.2 A (see fig. 12).
c. I_SD 2.2 A, dI/dt  40 A/s, V_DD V_DS, T_J  150 .
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply




Description

Third generation Power MOSFETs IRFBC20 from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package IRFBC20 is universally preferred for all ommercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.