IRFBA31N50L

The features of IRFBA31N50L are: (1)low in-resistance; (2)high speed switching; (3)low gate drive current due to improved gate charge characteristics; (4)built in fast recovery diose; (5)improved avalanche ruggednedd and dynamic dv/dt, fully characterized avalanche voltage and current.

The following is about the absolute maximum ratings of IRFBA31N50L: (1)continuous drain current, VGS @ 10V: 31A; (2)continuous drain current, VGS @ 10V: 19A; (3)drain current-pulse: 124A; (4)power dissipation: 360W; (5)linear derating factor: 2.9W/; (6)operating junction and storage temperature range: -55 to +150.

The electrical characteristics of the IRFBA31N50L are: (1)drain-source breakdown voltage: 500V min at VGS=0V, ID=250A; (2)breakdown voltage temp. coefficient: 0.55V/ typ at reference to 25, ID=1mA; (3)static drain-source on-state resistance: 0.152 max at VGS=10V, ID=19A; (4)gate thresholad voltage: 3.5V min and 5.5V max at VDS=VGS, ID=250A; (5)gate-source forward leakage: 100nA max at VGS=30V; (6)gate-source reverse leakage: -100nA max at VGS=-30V; (7)drain-source leakage current: 50A min at VDS=500V, VGS=0V.