IRFBA1404P

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 300W
Gate Charge (Qg) @ Vgs: 200nC @ 10V
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 7360pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 206A
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 95A, 10V
Package / Case: Super-220?-3 (Straight Leads)
Supplier Device Package: SUPER-220? (TO-273AA)


Application

Anti-lock Braking Systems (ABS)
Electric Power Steering (EPS)
Electric Braking
Radiator Fan Control
Benefits


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	206Ü	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	145Ü
IDM	Pulsed Drain Current Å	650
PD @TA = 25°C	Power Dissipation á	300	W
PD @TC = 25°C	Power Dissipation	2.0
	Linear Derating Factor	+20	W/°C
VGS	Gate-to-Source Voltage	± 30	V
TSTG	Peak Diode Recovery dv/dt É	-40 to + 175 -55 to + 175	V/ns
	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torqe, 6-32 or M3 screwÜ	300 (1.6mm from case )

Description

Specifically designed for Automotive applications IRFBA1404P, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche. The Super-220 TM is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. The result is significantly increased current handling capability over both the TO-220 and the much larger TO- 247 package. The combination of extremely low on-resistance silicon and the Super-220 TM package IRFBA1404P makes it ideal to reduce the component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. This package has been designed to meet automotive, Q101, qualification standard. These benefits make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other